BINDING-ENERGIES OF ELECTRONS BY NITROGEN PAIRS IN GAP

被引:10
作者
LI, MF [1 ]
MAO, DQ [1 ]
REN, SY [1 ]
机构
[1] UNIV SCI & TECHNOL CHINA, DEPT PHYS, HEFEI, PEOPLES R CHINA
关键词
D O I
10.1103/PhysRevB.32.6907
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6907 / 6909
页数:3
相关论文
共 20 条
[1]   ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE [J].
ALLEN, JW .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04) :1136-&
[2]   BINDING OF ELECTRONS BY NITROGEN PAIRS IN GAP [J].
BRAND, S ;
JAROS, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (14) :2789-2796
[3]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[4]   ACCEPTOR-LIKE EXCITED S-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].
COHEN, E ;
STURGE, MD ;
LIPARI, NO ;
ALTARELLI, M ;
BALDERESCHI, A .
PHYSICAL REVIEW LETTERS, 1975, 35 (23) :1591-1594
[5]   EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].
COHEN, E ;
STURGE, MD .
PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051
[6]   TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1968, 175 (03) :991-&
[7]   THEORY OF SUBSTITUTIONAL DEEP TRAPS IN COVALENT SEMICONDUCTORS [J].
HJALMARSON, HP ;
VOGL, P ;
WOLFORD, DJ ;
DOW, JD .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :810-813
[8]   ISOELECTRONIC DONORS AND ACCEPTORS [J].
HOPFIELD, JJ ;
THOMAS, DG ;
LYNCH, RT .
PHYSICAL REVIEW LETTERS, 1966, 17 (06) :312-&
[9]   AN INVESTIGATION OF DEEP-LEVEL WAVEFUNCTIONS WITH ENERGIES NEAR THE BAND EDGES [J].
LI, MF ;
REN, SY ;
MAO, DQ .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19) :3415-3422
[10]   GLOBAL PREDICTIONS OF T2-SYMMETRIC DEEP LEVEL WAVEFUNCTIONS IN SEMICONDUCTORS [J].
LI, MF ;
MAO, DQ ;
REN, SY .
SOLID STATE COMMUNICATIONS, 1983, 48 (09) :789-793