HORIZONTAL BRIDGMAN GROWTH OF GAAS DOPED WITH ISOVALENT IMPURITY

被引:1
作者
MORAVEC, F
STEPANEK, B
DOUBRAVA, P
机构
关键词
D O I
10.1002/crat.2170260509
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Single crystals of GaAs doped with In and N were grown by the horizontal Bridgman method. The influence of isovalent doping on the crystal growth was investigated. The single crystals were examined by means of the chemical etching of dislocations, electrical measurements and optical measurements.
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页码:579 / 585
页数:7
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