EFFECT OF ISO-ELECTRONIC DOPANTS ON THE DISLOCATION DENSITY OF GAAS

被引：17

作者：

BLOM, GM ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 05期

关键词：

D O I：

10.1007/BF02652124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：391 / 396

页数：6

共 20 条

[1] GROWTH AND CHARACTERIZATION OF LOW DEFECT GAAS BY VERTICAL GRADIENT FREEZE [J].

ABERNATHY, CR ;

KINSELLA, AP ;

JORDAN, AS ;

CARUSO, R ;

PEARTON, SJ ;

TEMKIN, H ;

WADE, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :106-115

[2] NATIVE DEFECTS AND STOICHIOMETRY IN GAALAS [J].

BLOM, GM .

JOURNAL OF CRYSTAL GROWTH, 1976, 36 (01) :125-137

[3] SILICON AND INDIUM DOPING OF GAAS - MEASUREMENTS OF THE EFFECT OF DOPING ON MECHANICAL-BEHAVIOR AND RELATION WITH DISLOCATION FORMATION [J].

BOURRET, ED ;

TABACHE, MG ;

BEEMAN, JW ;

ELLIOT, AG ;

SCOTT, M .

JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :275-281

[4] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[5] GROWTH OF SI AND IN DOUBLE-DOPED DISLOCATION-FREE CONDUCTIVE GAAS CRYSTAL BY THE LEC TECHNIQUE [J].

FUJII, T ;

NAKAJIMA, M ;

FUKUDA, T .

MATERIALS LETTERS, 1986, 4 (04) :189-193

[6]

GORYUNOVA NA, 1968, SEMICONDUCTORS SEMIM, V4

[7] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[8]

INADA T, 1986, J ELECTRON MATER, V15, P168

[9] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[10] THE ROLE OF CRYSTAL DIAMETER AND IMPURITY HARDENING ON THE THRESHOLD FOR DISLOCATION FORMATION IN LEC GAAS [J].

JORDAN, AS ;

PARSEY, JM .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :280-286

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