GROWTH AND CHARACTERIZATION OF LOW DEFECT GAAS BY VERTICAL GRADIENT FREEZE

被引:22
作者
ABERNATHY, CR
KINSELLA, AP
JORDAN, AS
CARUSO, R
PEARTON, SJ
TEMKIN, H
WADE, H
机构
关键词
D O I
10.1016/0022-0248(87)90210-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:106 / 115
页数:10
相关论文
共 15 条
[1]   THE PRODUCTION OF HIGH-QUALITY, III-V COMPOUND SEMICONDUCTOR CRYSTALS [J].
CLEMANS, JE ;
GAULT, WA ;
MONBERG, EM .
AT&T TECHNICAL JOURNAL, 1986, 65 (04) :86-98
[2]  
CUMMINGS KD, 1986, J APPL PHYS, V60, P1680
[3]   EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].
DOBRILLA, P ;
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :208-218
[4]   TEMPERATURE-GRADIENTS, DOPANTS, AND DISLOCATION FORMATION DURING LOW-PRESSURE LEC GROWTH OF GAAS [J].
ELLIOT, AG ;
WEI, CL ;
VANDERWATER, DA .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :59-68
[5]   LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].
ELLIOT, AG ;
WEI, CL ;
FARRARO, R ;
WOOLHOUSE, G ;
SCOTT, M ;
HISKES, R .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :169-178
[6]   A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS [J].
GAULT, WA ;
MONBERG, EM ;
CLEMANS, JE .
JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :491-506
[7]   A GAAS 16-KBIT STATIC RAM USING DISLOCATION-FREE CRYSTAL [J].
HIRAYAMA, M ;
TOGASHI, M ;
KATO, N ;
SUZUKI, M ;
MATSUOKA, Y ;
KAWASAKI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :104-110
[8]  
INOUE T, 1986, I PHYS C SER, V79, P7
[9]   AN ANALYSIS OF THE DERIVATIVE WEIGHT-GAIN SIGNAL FROM MEASURED CRYSTAL SHAPE - IMPLICATIONS FOR DIAMETER CONTROL OF GAAS [J].
JORDAN, AS ;
CARUSO, R ;
VONNEIDA, AR .
BELL SYSTEM TECHNICAL JOURNAL, 1983, 62 (02) :477-498
[10]  
JORDAN AS, 1986, J CRYST GROWTH, V76, P243