TEMPERATURE-GRADIENTS, DOPANTS, AND DISLOCATION FORMATION DURING LOW-PRESSURE LEC GROWTH OF GAAS

被引：16

作者：

ELLIOT, AG

WEI, CL

VANDERWATER, DA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90204-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：59 / 68

页数：10

共 36 条

[1] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS [J].

BAGAI, RK ;

BORLE, WN .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01) :25-46

[2]

BOURRET ED, 1987, APPL PHYS LETT, V50

[3]

Duseaux M., 1984, Semi-Insulating III-V materials, P118

[4] FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE-CRYSTALS [J].

DUSEAUX, M ;

JACOB, G .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :790-793

[5] TEMPERATURE PROFILE AND THERMAL-STRESS CALCULATIONS IN GAAS CRYSTALS GROWING FROM THE MELT [J].

DUSEAUX, M .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :576-590

[6] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J].

EHRENREICH, H ;

HIRTH, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :668-670

[7] LOW DISLOCATION DENSITY, LARGE DIAMETER, LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].

ELLIOT, AG ;

WEI, CL ;

FARRARO, R ;

WOOLHOUSE, G ;

SCOTT, M ;

HISKES, R .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :169-178

[8]

ELLIOT AG, IN PRESS

[9] DISLOCATION-FREE SILICON-DOPED GALLIUM-ARSENIDE GROWN BY LEC PROCEDURE [J].

FORNARI, R ;

PAORICI, C ;

ZANOTTI, L ;

ZUCCALLI, G .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :415-418

[10]

Hobgood H. M., 1984, Semi-Insulating III-V materials, P149

← 1 2 3 4 →