TEMPERATURE-GRADIENTS, DOPANTS, AND DISLOCATION FORMATION DURING LOW-PRESSURE LEC GROWTH OF GAAS

被引：16

作者：

ELLIOT, AG

WEI, CL

VANDERWATER, DA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(87)90204-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：59 / 68

页数：10

共 36 条

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