DISLOCATION-FREE SILICON-DOPED GALLIUM-ARSENIDE GROWN BY LEC PROCEDURE

被引：28

作者：

FORNARI, R

PAORICI, C

ZANOTTI, L

ZUCCALLI, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 63卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90234-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：415 / 418

页数：4

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共 16 条

[1] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES
BILLIG, E
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +
[2] BRICE JC, 1977, PHILIPS TECH REV, V37, P250
[3] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS
CHIN, AK
KING, WC
LEONARD, TJ
ROEDEL, RJ
ZIPFEL, CL
KERAMIDAS, VG
ERMANIS, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 661 - 669
[4] MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS
DEKOCK, AJR
VANDEWIJGERT, WM
HENGST, JHT
ROKSNOER, PJ
HUYBREGTS, JMPL
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) : 13 - 28
[5] EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE
FORNARI, R
PAORICI, C
ZANOTTI, L
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (02) : 157 - 164
[6] FORNARI R, IN PRESS
[7] GROWTH OF GAAS INGOTS WITH HIGH FREE-ELECTRON CONCENTRATIONS
GREENE, PD
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 612 - 618
[8] HOLLAN L, 1980, CURRENT TOPICS MATER, V5, P3
[9] 75TH ANNIVERSARY REVIEW SERIES - COMPOUND SEMICONDUCTORS
HOLONYAK, N
STILLMAN, GE
WOLFE, CM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : C487 - C499
[10] GROWTH OF DISLOCATION-FREE GAAS CRYSTALS BY NITROGEN DOPING
JACOB, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 669 - 671