EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE

[1] Belyatskaya N. S., 1972, Soviet Physics - Crystallography, V17, P126

[2] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[3] EFFECT OF THE SOLIDIFICATION FRONT SHAPE ON THE TEMPERATURE DISTRIBUTION IN THE CRYSTAL [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 757 - 762

[4] BRANTLEY WA, 1975, APR P IEEE REL PHYS, P267

[5] Brice J. C., 1970, Journal of Crystal Growth, V7, P9, DOI 10.1016/0022-0248(70)90107-7

[6] BRICE JC, 1974, GROWTH CRYSTALS LIQU

[7] BRICE JC, 1966, NATURE, V209, P1364

[8] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 661 - 669

[9] DEKOCK AJR, 1980, HDB SEMICONDUCTORS, P290

[10] GRABMAIER BC, 1972, J CRYST GROWTH, V13, P653

[1] Belyatskaya N. S., 1972, Soviet Physics - Crystallography, V17, P126

[2] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +

[3] EFFECT OF THE SOLIDIFICATION FRONT SHAPE ON THE TEMPERATURE DISTRIBUTION IN THE CRYSTAL [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (06) : 757 - 762

[4] BRANTLEY WA, 1975, APR P IEEE REL PHYS, P267

[5] Brice J. C., 1970, Journal of Crystal Growth, V7, P9, DOI 10.1016/0022-0248(70)90107-7

[6] BRICE JC, 1974, GROWTH CRYSTALS LIQU

[7] BRICE JC, 1966, NATURE, V209, P1364

[8] STRESS-INDUCED DARK LINE DEFECT FORMATION IN GAALAS-SI LEDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 661 - 669

[9] DEKOCK AJR, 1980, HDB SEMICONDUCTORS, P290

[10] GRABMAIER BC, 1972, J CRYST GROWTH, V13, P653