MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS

被引：22

作者：

DEKOCK, AJR ^{[1
]}

VANDEWIJGERT, WM ^{[1
]}

HENGST, JHT ^{[1
]}

ROKSNOER, PJ ^{[1
]}

HUYBREGTS, JMPL ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1016/0022-0248(77)90089-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：13 / 28

页数：16

共 35 条

[1] AMELINCKX S, REPORT LAKE PLACID C, P3
[2] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[3] CARRUTHERS JR, 1975, CRYSTAL GROWTH CHARA
[4] CHARACTERIZATION OF DEFECTS IN GAP AND GAASP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON-MICROSCOPY
DUPUY, M
LAFEUILLE, D
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 244 - 249
[5] FORMATION AND NATURE OF SWIRL DEFECTS IN SILICON
FOLL, H
KOLBESEN, BO
[J]. APPLIED PHYSICS, 1975, 8 (04): : 319 - 331
[6] FOLL H, 1976, THESIS U STUTTGART
[7] DISLOCATION LOOPS IN QUENCHED ALUMINIUM
HIRSCH, PB
SILCOX, J
SMALLMAN, RE
WESTMACOTT, KH
[J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (32): : 897 - &
[8] ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS
IIZUKA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) : 1190 - &
[9] DETERMINATION OF SOLIDUS AND GALLIUM AND PHOSPHORUS VACANCY CONCENTRATIONS IN GAP
JORDAN, AS
VONNEIDA, AR
CARUSO, R
KIM, CK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) : 153 - 158
[10] KOCK AJR, 1975, J CRYST GROWTH, V30, P279