CHARACTERIZATION OF DEFECTS IN GAP AND GAASP GRADED HETEROJUNCTIONS BY TRANSMISSION ELECTRON-MICROSCOPY

被引：27

作者：

DUPUY, M ^{[1
]}

LAFEUILLE, D ^{[1
]}

机构：

[1] CTR ETUDES NUCL,LAB ELECTR & TECHNOL INFORMATIQUE,38041 GRENOBLE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90137-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：244 / 249

页数：6

相关论文

共 14 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] FORMATION AND ELIMINATION OF HELICAL DISLOCATIONS IN SEMICONDUCTORS
ABRAHAMS, MS
BLANC, J
BUIOCCHI, CJ
[J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (184): : 795 - &
[3] PREPARATION OF [100]-ORIENTED FOILS OF GAAS FOR TRANSMISSION ELECTRON MICROSCOPY
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1980 - &
[4] ON DETERMINATION OF NATURE OF DISLOCATION LOOPS
EDMONDSON, B
WILLIAMSON, GK
[J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (98): : 277 - &
[5] Friedel J., 1964, DISLOCATIONS
[6] DISSOCIATION OF DISLOCATIONS IN GAP
GAI, PL
HOWIE, A
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (04): : 939 - 943
[7] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS
GEVERS, R
ART, A
AMELINCKX, S
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593
[8] HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES
HERZOG, AH
KEUNE, DL
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 600 - &
[9] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE
HUTCHINSON, PW
DOBSON, PS
[J]. PHILOSOPHICAL MAGAZINE, 1974, 30 (01) : 65 - 73
[10] INTERPRETATION OF DISLOCATION CONTRAST IN X-RAY TOPOGRAPHS OF GAAS1-XPX
MADER, S
BLAKESLEE, AE
ANGILELLO, J
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4730 - 4734