HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[3] ARCHER RJ, 1967, 1966 P GAAS S READ, P103

[4] Bergh A. A., 1969, Ohmic contacts to semiconductors, P115

[5] ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE [J]. APPLIED PHYSICS LETTERS, 1963, 3 (10) : 173 - 175

[6] CARR WN, 1965, IEEE T ELECTRON DEVI, VED12, P53

[7] GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 355 - +

[8] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[9] EDWARDS JW, 1962, SEMICOND PROD, V5, P31

[10] HIGHLY REFRACTIVE GLASSES TO IMPROVE ELECTROLUMINESCENT DIODE EFFICIENCIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1718 - &

[1] DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 760 - &

[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[3] ARCHER RJ, 1967, 1966 P GAAS S READ, P103

[4] Bergh A. A., 1969, Ohmic contacts to semiconductors, P115

[5] ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE [J]. APPLIED PHYSICS LETTERS, 1963, 3 (10) : 173 - 175

[6] CARR WN, 1965, IEEE T ELECTRON DEVI, VED12, P53

[7] GAAS-GAASP HETEROSTRUCTURE INJECTION LASERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 355 - +

[8] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &

[9] EDWARDS JW, 1962, SEMICOND PROD, V5, P31

[10] HIGHLY REFRACTIVE GLASSES TO IMPROVE ELECTROLUMINESCENT DIODE EFFICIENCIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1718 - &