SILICON AND INDIUM DOPING OF GAAS - MEASUREMENTS OF THE EFFECT OF DOPING ON MECHANICAL-BEHAVIOR AND RELATION WITH DISLOCATION FORMATION

被引：32

作者：

BOURRET, ED

TABACHE, MG

BEEMAN, JW

ELLIOT, AG

SCOTT, M

机构：

[1] HEWLETT PACKARD CORP,DIV OPTOELECTR,SAN JOSE,CA 95131

[2] HEWLETT PACKARD CORP,CENT RES LAB,PALO ALTO,CA 94304

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 1-2期

关键词：

This work was supported by the Director; Office of Energy Research; Office of Basic Energy Sciences; Materials Science Division of the US Department of Energy under Contract DE-ACO3-76 SF00098;

D O I：

10.1016/0022-0248(87)90235-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：275 / 281

页数：7

共 22 条

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