GROWTH OF SI AND IN DOUBLE-DOPED DISLOCATION-FREE CONDUCTIVE GAAS CRYSTAL BY THE LEC TECHNIQUE

被引：10

作者：

FUJII, T

NAKAJIMA, M

FUKUDA, T

机构：

来源：

MATERIALS LETTERS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1016/0167-577X(86)90094-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：189 / 193

页数：5

共 9 条

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[2] EPD INVESTIGATION IN LEC-GROWN SILICON-DOPED GALLIUM-ARSENIDE [J].

FORNARI, R ;

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CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (02) :157-164

[3]

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[4]

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[5] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

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VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[6] EFFECT OF DOPING ON FORMATION OF DISLOCATION-STRUCTURE IN SEMICONDUCTOR CRYSTALS [J].

MILVIDSKY, MG ;

OSVENSKY, VB ;

SHIFRIN, SS .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :396-403

[7]

NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63

[8] GROWTH AND RESISTIVITY CHARACTERISTICS OF UNDOPED SEMI-INSULATING GAAS CRYSTALS WITH LOW DISLOCATION DENSITY [J].

SHIMADA, T ;

OBOKATA, T ;

FUKUDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07) :L441-L444

[9]

SHIMADA T, 1984, JAPAN J APPL PHYS, V23, pL24

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