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GROWTH AND RESISTIVITY CHARACTERISTICS OF UNDOPED SEMI-INSULATING GAAS CRYSTALS WITH LOW DISLOCATION DENSITY

被引：6
作者：
SHIMADA, T
OBOKATA, T
FUKUDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期
关键词：
D O I：
10.1143/JJAP.23.L441
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L441 / L444
页数：4
相关论文
共 4 条
[1]   SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :305-307
[2]   DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].
MIYAZAWA, S ;
ISHII, Y ;
ISHIDA, S ;
NANISHI, Y .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855
[3]   DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].
PETROFF, P ;
HARTMAN, RL .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471
[4]   GROWTH OF LOW AND HOMOGENEOUS DISLOCATION DENSITY GAAS CRYSTAL BY IMPROVED LEC TECHNIQUE [J].
SHIMADA, T ;
TERASHIMA, K ;
NAKAJIMA, H ;
FUKUDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L23-L25
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