THE ROLE OF CRYSTAL DIAMETER AND IMPURITY HARDENING ON THE THRESHOLD FOR DISLOCATION FORMATION IN LEC GAAS

被引：18

作者：

JORDAN, AS

PARSEY, JM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 79卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90449-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：280 / 286

页数：7

共 20 条

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[9] AN ANALYSIS OF DISLOCATION REDUCTION BY IMPURITY HARDENING IN THE LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH OF (111) INP [J].

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BROWN, GT ;

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[10] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS [J].

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