AN ANALYSIS OF DISLOCATION REDUCTION BY IMPURITY HARDENING IN THE LIQUID-ENCAPSULATED CZOCHRALSKI GROWTH OF (111) INP

被引：29

作者：

JORDAN, AS

BROWN, GT

COCKAYNE, B

BRASEN, D

BONNER, WA

机构：

[1] ROYAL SIGNALS & RADAR ESTAB, MALVERN WR14 3PS, WORCS, ENGLAND

[2] BELL COMMUN RES, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4383 / 4389

页数：7

共 37 条

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[6] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP
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[7] DEFORMATION-BEHAVIOR OF SINGLE-CRYSTALS OF INP IN UNIAXIAL COMPRESSION
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MACEWAN, WR
[J]. JOURNAL OF MATERIALS SCIENCE, 1980, 15 (06) : 1469 - 1477
[8] MECHANICAL STRENGTH OF LEC GE-DOPED SINGLE-CRYSTAL INP
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[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1983, 2 (11) : 667 - 669
[9] INVESTIGATION OF MICROPLASMAS IN INP AVALANCHE PHOTO-DIODES
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[J]. ELECTRON DEVICE LETTERS, 1980, 1 (03): : 27 - 29
[10] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS
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HOLMES, DE
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124

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