THE LOCALIZED VIBRATIONAL-MODE OF NITROGEN IN GAAS

被引：18

作者：

RIEDE, V ^{[1
]}

NEUMANN, H ^{[1
]}

SOBOTTA, H ^{[1
]}

SCHWABE, R ^{[1
]}

SEIFERT, W ^{[1
]}

SCHWETLICK, S ^{[1
]}

机构：

[1] KARL MARX UNIV, SEKT CHEM, DDR-7010 LEIPZIG, GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1986年 / 93卷 / 02期

关键词：

D O I：

10.1002/pssa.2210930250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K151 / K156

页数：6

共 12 条

[1]

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[5]

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[8] Hydride VPE Growth of GaAs for FET's [J].

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[9] GROWTH AND PROPERTIES OF VPE GAP FOR GREEN LEDS [J].

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[10] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

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HOPFIELD, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :680-&

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