GROWTH AND PROPERTIES OF VPE GAP FOR GREEN LEDS

被引：44

作者：

STRINGFELLOW, GB ^{[1
]}

WEINER, ME ^{[1
]}

BURMEISTER, RA ^{[1
]}

机构：

[1] HEWLETT-PACKARD LABS,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1007/BF02655411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：363 / 387

页数：25

共 35 条

[1] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP
BACHRACH, RZ
LORIMOR, OG
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 700 - 713
[2] HEMISPHERICAL GAP-N GREEN ELECTROLUMINESCENT DIODES
BACHRACH, RZ
DIXON, RW
LORIMOR, OG
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (09) : 1037 - &
[3] BURD JW, AFMLTR7389 AIR FORC
[4] BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587
[5] CABRERA N, 1963, ART SCIENCE GROWING, P20
[6] Chernov A., 1961, SOV PHYS USP, V4, P116, DOI [DOI 10.1070/PU1961V004N01ABEH003328, 10.1070/PU1961v004n01ABEH003328.]
[7] Craford M. G., 1973, Journal of Electronic Materials, V2, P137, DOI 10.1007/BF02658108
[8] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[9] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING
FARROW, RFC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907
[10] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION
FERGUSSON, RR
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) : 585 - 592