Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures

被引：27

作者：

Stoffel, M ^{[1
]}

Denker, U ^{[1
]}

Kar, GS ^{[1
]}

Sigg, H ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 14期

关键词：

D O I：

10.1063/1.1615832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the emission wavelength region of self-assembled Ge/Si(001) islands. The islands were grown between 360 and 840 degreesC and subsequently capped with Si at low temperatures (300 degreesC). Under these conditions, the island morphology is preserved as revealed by atomic force microscopy. By decreasing the capping temperature, photoluminescence measurements evidence a systematic redshift enabling us to discuss the relative contribution of Si intermixing during growth and during capping. We also find that the emission wavelength can be extended up to 2.06 mum for hut clusters grown at 400 degreesC. By further decreasing the Ge growth temperature to 360 degreesC, the emission energy evidences a blueshift. This result is explained by enhanced charge carrier confinement in extremely small Ge quantum dots. (C) 2003 American Institute of Physics.

引用

页码：2910 / 2912

页数：3

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