Exciplex emission and its relationship with depletion organic heterojunction

被引：20

作者：

Ng, Tsz-Wai ^{[1
]}

Lo, Ming-Fai ^{[1
]}

Lee, Shuit-Tong ^{[1
]}

Lee, Chun-Sing ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, COSDAF, Hong Kong, Hong Kong, Peoples R China

来源：

ORGANIC ELECTRONICS | 2012年 / 13卷 / 09期

关键词：

Exciplex; Organic heterojunction; Organic light-emitting diode; ELECTRONIC-STRUCTURES; HOLE-INJECTION; INTERFACES; DEVICES; DIPOLE; METAL;

D O I：

10.1016/j.orgel.2012.05.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciplex emission is a special form of luminescence from excited state complex formed between two contacting materials at interface in organic light-emitting devices (OLEDs). While considerable works has been focused on the role of exciplex states in interfacial light emitting processes, the understanding for the fundamental forming criteria of exciplex states is limited. In this work, six pairs of exciplex-forming organic materials were examined using photoemission spectroscopies. Interestingly, all the studied pairs show special charge transfer with N-type material donates a considerable amount of electron to the contacting P-type material, leading to energy levels bending and depletion of mobile majority carriers on the two sides of the junction, i.e. P-delta -N delta+. The close relation between the depletion organic HJs and the exciplex emission is discussed. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：1641 / 1645

页数：5

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