Basic features of transport in microcrystalline silicon

被引：58

作者：

Kocka, J ^{[1
]}

Fejfar, A ^{[1
]}

Stuchlíková, H ^{[1
]}

Stuchlík, J ^{[1
]}

Fojtík, P ^{[1
]}

Mates, T ^{[1
]}

Rezek, B ^{[1
]}

Luterová, K ^{[1
]}

Svrcek, V ^{[1
]}

Pelant, I ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 78卷 / 1-4期

关键词：

charge transport; microcrystalline silicon; grain boundaries;

D O I：

10.1016/S0927-0248(02)00449-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Charge transport in microcrystalline silicon is strongly influenced by its heterogeneous microstructure composed of crystalline grains and amorphous tissue. An even bigger effect on transport is their arrangement in grain aggregates or possibly columns, separated by grain boundaries, causing transport anisotropy and/or depth profile of transport properties. We review special experimental methods developed to study the resulting transport features: local electronic studies by combined atomic force microscopy, anisotropy of conductivity and diffusion length and also their thickness dependence. A simple model based on the concept of changes of transport path for description of the observed phenomena is reviewed and its consequences for charge collection in microcrystalline based solar cells are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：493 / 512

页数：20

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