Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy

被引：28

作者：

Koukitu, A ^{[1
]}

Kumagai, Y ^{[1
]}

Seki, H ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷

关键词：

InGaAlN; quaternary nitride; MOVPE; thermodynamic analysis; deposition diagram;

D O I：

10.1016/S0022-0248(00)00810-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A thermodynamic analysis on the metalorganic vapor-phase epitaxy (MOVPE) of InxGayAl1-x-yN quaternary alloy is performed. The equilibrium partial pressures of gaseous species at the deposition zone are calculated for various growth conditions. Then, the deposition modes, growth or etching, and the relationship between solid composition, x and y, and input mole ratios of group III metalorganic sources are studied. It is shown that the growth mode of InGaAlN strongly depends on growth temperature, hydrogen partial pressure in the carrier gas and input group III partial pressure. Complex behavior between the input mole ratios of group III metalorganic sources and the alloy composition of grown InxGayAl1-x-yN is also clarified. Based on the completed deposition diagrams, we can find out the appropriate growth conditions for the MOVPE growth of InxGayAl1-x-yN. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：743 / 750

页数：8

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