Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium

被引：28

作者：

Cole, Garrett D. ^{[1
]}

Bai, Yu ^{[2
]}

Aspelmeyer, Markus ^{[1
]}

Fitzgerald, Eugene A. ^{[2
]}

机构：

[1] Univ Vienna, Fak Phys, A-1090 Vienna, Austria

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

基金：

奥地利科学基金会; 欧洲研究理事会;

关键词：

aluminium compounds; etching; gallium arsenide; III-V semiconductors; micromachining; semiconductor epitaxial layers; EPITAXIAL LIFT-OFF; XENON DIFLUORIDE; HIGH-EFFICIENCY; SOLAR-CELLS; SILICON; GAAS; VAPOR; FABRICATION; XEF2;

D O I：

10.1063/1.3455104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We outline a facile fabrication technique for the realization of free-standing AlxGa1-xAs heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF2) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of similar to 10(6). (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455104]

引用

页数：3

共 25 条

[1] COMPARISON OF ETCHING PROCESSES OF SILICON AND GERMANIUM IN SF6-O-2 RADIOFREQUENCY PLASMA [J].