Ferromagnetism in Cu-doped ZnO films: Role of charge carriers

被引：113

作者：

Tiwari, Ashutosh ^{[1
]}

Snure, Michael ^{[1
]}

Kumar, Dhananjay ^{[2
]}

Abiade, Jeremiah T. ^{[2
]}

机构：

[1] Univ Utah, Nanostructured Mat Res Lab, Dept Mat Sci & Engn, SLC, Salt Lake City, UT 84112 USA

[2] N Carolina A & T Univ Greensborro, Dept Mech Engn, Greensboro, NC 27411 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2857481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of room temperature ferromagnetism in Cu-doped (5%) ZnO films grown on c-plane sapphire substrates. Films were prepared by pulsed laser deposition technique and were thoroughly characterized using several state-of-the-art characterization techniques. Hall measurements showed that the films are of n-type with a carrier concentration of 3x10(17) cm(-3). Magnetization measurements showed that the films exhibit room temperature ferromagnetism with a saturation magnetization of similar to 1.45 mu(B)/Cu atom. When additional carriers were introduced in the films, ferromagnetism was completely vanished. Our results show that the p-type nature of the film is not essential for realizing ferromagnetic characteristics; however, the concentration of n-type carriers should not exceed a critical value. (C) 2008 American Institute of Physics.

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