Magnetic properties of n-type Cu-doped ZnO thin films

被引：153

作者：

Hou, D. L. ^{[1
]}

Ye, X. J. ^{[1
]}

Meng, H. J. ^{[1
]}

Zhou, H. J. ^{[1
]}

Li, X. L. ^{[1
]}

Zhen, C. M. ^{[1
]}

Tang, G. D. ^{[1
]}

机构：

[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of n-type Zn1-xCuxO (x=0.02, 0.06, 0.10, and 0.12) films was prepared using direct current reactive magnetron sputtering. Magnetic measurements indicate that all the films are ferromagnetic at room temperature and the moment per Cu ion decreases with increasing copper concentration and nitrogen doping. The observed magnetic moment was 1.8 mu(B)/Cu for Zn0.98Cu0.02O film and the transition temperature of about 350 K decreased to 320 K due to nitrogen doping. It can be concluded that itinerant electrons play an important role in ferromagnetism. The resistivity increased with increasing copper concentration and nitrogen doping. The anomalous Hall effect has been found for ferromagnetic materials. (c) 2007 American Institute of Physics.

引用

页数：3

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