High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties

被引：575

作者：

Jin, ZW

Fukumura, T

Kawasaki, M

Ando, K

Saito, H

Sekiguchi, T

Yoo, YZ

Murakami, M

Matsumoto, Y

Hasegawa, T

Koinuma, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 24期

关键词：

D O I：

10.1063/1.1377856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion. The solubility behavior of TM ions was discussed from the viewpoints of the ionic radius and valence start. The magneto-optical responses coincident with absorption spectra were observed for Mn- and Co-doped samples. Cathodoluminescence spectra were studied for Cr-, Mn-, Fe-, and Co-doped samples. among which Cr-doped ZnO showed two sharp peaks at 2.97 eV and 3.71 eV, respectively, at the expense of the exciton emission peak of pure ZnO at 3.25 eV. Different magnetoresistance behavior was observed for the samples codoped with n-type carriers. Ferromagnetism was not observed for Cr- to Cu-doped samples down to 3 K. (C) 2001 American Institute of Physics.

引用

页码：3824 / 3826

页数：3

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