Mechanisms of B deactivation control by F co-implantation

被引：69

作者：

Cowern, NEB ^{[1
]}

Colombeau, B

Benson, J

Smith, AJ

Lerch, W

Paul, S

Graf, T

Cristiano, F

Hebras, X

Bolze, D

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany

[3] CNRS, LAAS, F-31077 Toulouse, France

[4] IHP, D-15236 Frankfurt, Oder, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1870131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing B-F interaction causes deactivation when F and B profiles overlap. Both pathways suppress B transient enhanced diffusion. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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