Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

被引：108

作者：

Pawlak, BJ

Surdeanu, R

Colombeau, B

Smith, AJ

Cowern, NEB

Lindsay, R

Vandervorst, W

Brijs, B

Richard, O

Cristiano, F

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

[2] Univ Surrey, Adv Technol Inst, Surrey GU2 7XH, England

[3] IMEC, B-3001 Louvain, Belgium

[4] CEMES, Ion Implantat Grp, CNRS, LAAS, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1682697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed information on the thermal stability of the boron activation. Using a previously established model of self-interstitial defect evolution from clusters to dislocation loops, we perform simulations of the release of interstitials from the end-of-range region. The simulations indicate that the measured deactivation is driven by interstitials emerging from the end-of-range defect region. (C) 2004 American Institute of Physics.

引用

页码：2055 / 2057

页数：3

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