Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

被引：25

作者：

Colombeau, B

Cristiano, F

Altibelli, A

Bonafos, C

Ben Assayag, G

Claverie, A

机构：

[1] CNRS, CEMES, F-31055 Toulouse 4, France

[2] CNRS, LAAS, F-31077 Toulouse, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 07期

关键词：

D O I：

10.1063/1.1344566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a physically based model describing the kinetic evolution of extrinsic defects during annealing is presented. The fundamental concepts of Ostwald ripening and formation energy of extrinsic defects are combined in this model, which has been tested against some classical experiments concerning (i) transient enhanced diffusion (TED) of dopants in conjunction with the dissolution of {113} defects and (ii) the "pulsed" TED observed in the case of ultralow energy implants where the surface acts as a strong sink for the silicon interstitial atoms. We show that a full understanding of the formation and the evolution of extended defects leads to a correct prediction of dopant enhanced diffusion in all experimental conditions. (C) 2001 American Institute of Physics.

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页码：940 / 942

页数：3

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