Boride-enhanced diffusion in silicon: Bulk and surface layers

被引：35

作者：

Cowern, NEB ^{[1
]}

Theunissen, MJJ ^{[1
]}

Roozeboom, F ^{[1
]}

van Berkum, JGM ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial silicon boride layers, located at the surface or within the bulk of single-crystal silicon, give rise to enhanced diffusion of B during annealing. A submonolayer buried boride layer releases approximate to 0.4 interstitials per B atom in the layer, generating a transient diffusion enhancement in the range of 10-100 for several minutes at 900 degrees C. The resulting profile broadening is comparable to that caused by ion implantation damage. At the same temperature, surface boride layers generate a diffusion enhancement of similar to 6, part of which arises from the B diffusion flux and part from the chemical influence of the boride layer. (C) 1999 American Institute of Physics. [S0003-6951(99)00428-3].

引用

页码：181 / 183

页数：3

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