The fraction of substitutional boron in silicon during ion implantation and thermal annealing

被引：71

作者：

Caturla, MJ ^{[1
]}

Johnson, MD ^{[1
]}

de la Rubia, TD ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that. during annealing of 40 keV B-implanted Si at 800 degrees C, there exists a time window during which all the implanted boron atoms are substitutional. Al earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. (C) 1998 American Institute of Physics.

引用

页码：2736 / 2738

页数：3

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