GENERAL-MODEL FOR INTRINSIC DOPANT DIFFUSION IN SILICON UNDER NONEQUILIBRIUM POINT-DEFECT CONDITIONS

被引：24

作者：

COWERN, NEB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.341273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4484 / 4490

页数：7

共 18 条

[1] DIFFUSION OF INDIUM IN SILICON INERT AND OXIDIZING AMBIENTS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9214-9216

[2] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[3] KINETICS OF THERMAL NITRIDATION PROCESSES IN THE STUDY OF DOPANT DIFFUSION MECHANISMS IN SILICON [J].

FAHEY, P ;

BARBUSCIA, G ;

MOSLEHI, M ;

DUTTON, RW .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786

[4]

FAHEY P, 1986, SEMICONDUCTOR SILICO

[5] MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].

FRANK, FC ;

TURNBULL, D .

PHYSICAL REVIEW, 1956, 104 (03) :617-618

[6]

FRANK W, 1984, DIFFUSION CRYSTALLIN, V2

[7]

GOESELE U, 1984, NOV MRS S IMP DIFF G

[8]

GOESELE U, 1986, SEMICONDUCTOR SILICO

[9]

GOESELE U, 1980, APPL PHYS, V23, P361

[10] TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA [J].

HAN, CJ ;

MOSLEHI, MM ;

HELMS, CR ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :641-643

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