DIFFUSION OF INDIUM IN SILICON INERT AND OXIDIZING AMBIENTS

The diffusion of indium in silicon at 1000 degree C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorus, boron, and rsenic, indium experiences significant oxidation-enhanced diffusion. This result indicates that indium, like the other elemens mentioned above, diffuses in silicon by a mixed interstitialcy and vacancy mechanism. It was also found that indium, similarly to gallium, segregates readily and diffuses rapidly in thermal silicon dioxide.