LIMITATIONS OF CV TECHNIQUE FOR ION-IMPLANTED PROFILES

被引：66

作者：

WU, CP

DOUGLAS, EC

MUELLER, CW

机构：

[1] RCA LABS,TECH STAFF,PRINCETON,NJ 08540

[2] NANYANG UNIV,SINGAPORE,SINGAPORE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 06期

关键词：

D O I：

10.1109/T-ED.1975.18130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：319 / 329

页数：11

共 25 条

[1] INTERPRETATION OF CAPACITANCE VS VOLTAGE MEASUREMENTS OF P-N-JUNCTIONS [J].

CARTER, WE ;

CHAWLA, BR ;

GUMMEL, HK .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :195-&

[2]

CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[3] RANGE AND DE/DX OF C N O F AND NE IN BE AND C FROM 500 KEV TO 2 MEV [J].

CHU, WK ;

BOURLAND, PD ;

WANG, KH ;

POWERS, D .

PHYSICAL REVIEW, 1968, 175 (02) :342-&

[4] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :943-&

[5]

DEARNALEY G, 1971, 2ND P INT C ION IMPL, V8, P1

[6] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].

DEMARI, A .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+

[7]

FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469

[8] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[9]

GRAY PE, 1964, PHYSICAL ELECTRONICS

[10] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

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