TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA

[1] CHARACTERIZATION OF THERMALLY NITRIDED SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 816 - 818

[2] AUCOIN R, 1981, OCT EL SOC M DENV

[3] AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 380 - 381

[4] SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 44 - 46

[5] Ekstedt T. W., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P189

[6] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[7] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002

[8] NITRIDATION OF SILICON AND OXIDIZED-SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2102 - 2108

[9] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7007 - 7014

[10] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) : 2053 - 2057

[1] CHARACTERIZATION OF THERMALLY NITRIDED SILICON DIOXIDE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 816 - 818

[2] AUCOIN R, 1981, OCT EL SOC M DENV

[3] AUGER ANALYSIS OF CHLORINE IN HCL-GROWN, OR CL2-GROWN SIO2 FILMS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 380 - 381

[4] SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 44 - 46

[5] Ekstedt T. W., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P189

[6] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[7] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6996 - 7002

[8] NITRIDATION OF SILICON AND OXIDIZED-SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2102 - 2108

[9] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7007 - 7014

[10] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) : 2053 - 2057