CHARACTERIZATION OF THERMALLY NITRIDED SILICON DIOXIDE

被引：14

作者：

AMANO, J ^{[1
]}

EKSTEDT, T ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：816 / 818

页数：3

共 14 条

[1] THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS
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SMITH, TE
CHANG, CC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1787 - 1794
[2] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING
CHEUNG, NW
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (11) : 859 - 861
[3] Chu WK., 1978, BACKSCATTERING SPECT
[4] TEMPERATURE-DEPENDENCE OF PT(111) SURFACE RELAXATION
DAVIES, JA
JACKSON, DP
MATSUNAMI, N
NORTON, PR
ANDERSEN, JU
[J]. SURFACE SCIENCE, 1978, 78 (02) : 274 - 294
[5] SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING
FELDMAN, LC
SILVERMAN, PJ
STENSGAARD, I
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 589 - 593
[6] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE
FELDMAN, LC
SILVERMAN, PJ
WILLIAMS, JS
JACKMAN, TE
STENSGAARD, I
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399
[7] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS
HABRAKEN, FHPM
KUIPER, AET
VANOOSTROM, A
TAMMINGA, Y
THEETEN, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 404 - 415
[8] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS
ITO, T
NOZAKI, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) : 2053 - 2057
[9] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS
ITO, T
NAKAMURA, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 184 - 188
[10] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS
ITO, T
NAKAMURA, T
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 498 - 502

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