EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS

[1] THRESHOLD VOLTAGE DEGRADATION OF MNOS-FET DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1657 - 1660

[2] CHAUDHARI PK, 1974, J ELECTROCHEM SOC, V124, P198

[3] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &

[4] DEAL BE, 1974, J ELECTROCHEM SOC, V121, P198

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 527 - 528

[7] Hot-Electron Trapping in CVD PSG Films [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1927 - 1930

[8] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[9] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 601 - 603

[10] HESS DW, 1975, J ELECTROCHEM SOC, V122, P1123, DOI 10.1149/1.2134407

[1] THRESHOLD VOLTAGE DEGRADATION OF MNOS-FET DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1657 - 1660

[2] CHAUDHARI PK, 1974, J ELECTROCHEM SOC, V124, P198

[3] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 601 - &

[4] DEAL BE, 1974, J ELECTROCHEM SOC, V121, P198

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 527 - 528

[7] Hot-Electron Trapping in CVD PSG Films [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1927 - 1930

[8] EFFECTS OF PROCESSING ON HOT-ELECTRON TRAPPING IN SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 42 - 47

[9] CONDUCTION AND TRAPPING OF ELECTRONS IN HIGHLY STRESSED ULTRATHIN FILMS OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 601 - 603

[10] HESS DW, 1975, J ELECTROCHEM SOC, V122, P1123, DOI 10.1149/1.2134407