THRESHOLD VOLTAGE DEGRADATION OF MNOS-FET DEVICES

[1] BENTCHKOWSKY DF, 1969, J APPL PHYS, V40, P3307

[2] CHAUDHARI PK, 1973, MAY EL SOC EXT SPRIN, P201

[3] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 986 - &

[4] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +

[5] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[6] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[7] OWEN AE, 1959, J SOC GLASS TECHNOL, V43, P159

[8] RANDS M, 1973, J ELCHEM SO, V120, P406

[9] ROSSEL P, 1970, SOLID STATE ELECT, V13, P257

[10] TRANSPORT OF SODIUM IONS IN SILICON DIOXIDE FILMS USING MOS STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01): : 51 - +

[1] BENTCHKOWSKY DF, 1969, J APPL PHYS, V40, P3307

[2] CHAUDHARI PK, 1973, MAY EL SOC EXT SPRIN, P201

[3] SODIUM ION DRIFT THROUGH PHOSPHOSILICATE GLASS-SIO2 FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 986 - &

[4] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +

[5] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[6] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[7] OWEN AE, 1959, J SOC GLASS TECHNOL, V43, P159

[8] RANDS M, 1973, J ELCHEM SO, V120, P406

[9] ROSSEL P, 1970, SOLID STATE ELECT, V13, P257

[10] TRANSPORT OF SODIUM IONS IN SILICON DIOXIDE FILMS USING MOS STRUCTURE [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01): : 51 - +