TRANSPORT OF SODIUM IONS IN SILICON DIOXIDE FILMS USING MOS STRUCTURE

被引：10

作者：

SINGH, BR

SRIVASTAVA, RS

RAI, SS

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 13卷 / 01期

关键词：

D O I：

10.1002/pssa.2210130103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：51 / +

页数：1

共 23 条

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