Role of C and B clusters in transient diffusion of B in silicon

被引：48

作者：

Cowern, NEB

Cacciato, A

Custer, JS

Saris, FW

Vandervorst, W

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

[2] IMEC,B-3001 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is approximate to 1.15 for C and similar to 1 for B, consistent with a volume compensation mechanism. (C) 1996 American Institute of Physics.

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收藏

页码：1150 / 1152

页数：3

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