MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI

Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects. © 1994 American Institute of Physics.