A miniature self-aligned pressure sensing element

被引：11

作者：

Goustouridis, D

Chatzandroulis, S

Normand, P

Tsoukalas, D

机构：

[1] Institute of Microelectronics, NCSR 'Demokritos'

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1996年 / 6卷 / 01期

关键词：

D O I：

10.1088/0960-1317/6/1/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process, which is based on self-aligned ion implantations and the silicon fusion bonding technique for fabricating capacitive pressure sensors, is described. Circular devices with radius of only 170 mu m have been fabricated and measured. These devices are designed for biomedical applications and operate with a zero-to-full scale range of 0-36 mm Hg.

引用

页码：33 / 35

页数：3

共 5 条

[1]

JI J, 1990, IEEE T ELECTRON DEV, V39, P2260

[2] ULTRA-STABLE, HIGH-TEMPERATURE PRESSURE SENSORS USING SILICON FUSION BONDING [J].