Superior Schottky electrode of RuO2 for deep level transient spectroscopy on anatase TiO2

An anatase TiO2 film was epitaxially grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metalorganic chemical vapor deposition. RuO2 Schottky electrode was fabricated on the epitaxial anatase film by reactive dc magnetron sputtering. The dark I-V and capacitance-voltage characteristics indicated the good rectification and thermal stability of the RuO2/anatase junction. This RuO2/anatase junction enables the stable measurements of deep level transient spectroscopy in the high-temperature region and is a promising Schottky electrode to examine the origins of deep levels in the band gap of anatase. (C) 2003 American Institute of Physics.