A METHOD TO CORRECT FOR LEAKAGE CURRENT EFFECTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON SCHOTTKY DIODES

被引：22

作者：

DMOWSKI, K ^{[1
]}

LEPLEY, B ^{[1
]}

LOSSON, E ^{[1
]}

ELBOUABDELLATI, M ^{[1
]}

机构：

[1] UNIV METZ,ECOLE SUPER ELECT,CTR LORRAIN OPT & ELECTR SOLIDES,F-57078 METZ 3,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An improved procedure is proposed to determine the accurate values of deep level parameters in Schottky diodes with non-negligible majority-carrier capture rate due to a leakage current. Numerical modeling of deep level transient spectroscopy signals from the EL2 center in GaAs demonstrates the degree to which leakage currents of various magnitudes can distort the spectra and without correction lead to misleading deep level parameters. Finally, deep levels in n-type InP Schottky diodes have been examined using a commercially available lock-in spectrometer DLS-82E to demonstrate the practical application of the proposed procedure.

引用

页码：3936 / 3943

页数：8

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