REAL AND APPARENT EFFECTS OF STRONG ELECTRIC-FIELDS ON THE ELECTRON-EMISSION FROM MIDGAP LEVELS EL2 AND EL0 IN GAAS

被引：24

作者：

LAGOWSKI, J

LIN, DG

GATOS, HC

PARSEY, JM

KAMINSKA, M

机构：

[1] UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.94980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：89 / 91

页数：3

相关论文

共 14 条

[1] 3-DIMENSIONAL POOLE-FRENKEL EFFECT
HARTKE, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4871 - &
[2] JOHNSON EJ, 1983, J APPL PHYS, V54, P201
[3] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS
LAGOWSKI, J
LIN, DG
AOYAMA, T
GATOS, HC
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338
[4] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
LAGOWSKI, J
GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
[5] LI GP, 1983, APPL PHYS LETT, V42, P840
[6] EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP
MAKRAMEBEID, S
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 464 - 466
[7] ELECTRIC-FIELD-INDUCED PHONON-ASSISTED TUNNEL IONIZATION FROM DEEP LEVELS IN SEMICONDUCTORS
MAKRAMEBEID, S
LANNOO, M
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (18) : 1281 - 1284
[8] QUANTUM MODEL FOR PHONON-ASSISTED TUNNEL IONIZATION OF DEEP LEVELS IN A SEMICONDUCTOR
MAKRAMEBEID, S
LANNOO, M
[J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6406 - 6424
[9] MAKRAMEBEID S, 1981, DEFECTS SEMICONDUCTO, V2, P495
[10] MIRCEA A, 1979, J PHYS LETT-PARIS, V40, pL31, DOI 10.1051/jphyslet:0197900400203100