共 14 条
- [2] JOHNSON EJ, 1983, J APPL PHYS, V54, P201
- [3] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 336 - 338
- [5] LI GP, 1983, APPL PHYS LETT, V42, P840
- [8] QUANTUM MODEL FOR PHONON-ASSISTED TUNNEL IONIZATION OF DEEP LEVELS IN A SEMICONDUCTOR [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6406 - 6424
- [9] MAKRAMEBEID S, 1981, DEFECTS SEMICONDUCTO, V2, P495
- [10] MIRCEA A, 1979, J PHYS LETT-PARIS, V40, pL31, DOI 10.1051/jphyslet:0197900400203100