ELECTRIC-FIELD-INDUCED PHONON-ASSISTED TUNNEL IONIZATION FROM DEEP LEVELS IN SEMICONDUCTORS

[1] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646

[2] ELECTRON-CAPTURE BY MULTIPHONON EMISSION AT THE B-CENTER IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22): : 4827 - 4832

[3] PHOTO-IONIZATION TRANSITION CR3+-]CR2+ IN GAAS-CR [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 697 - 699

[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[5] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423

[6] Jesper T., 1980, Semi-Insulating III-V Materials, P233

[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[8] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3587 - 3591

[9] LEYRAL P, UNPUB

[10] Makram-Ebeid S., 1980, Journal of the Physical Society of Japan, V49, P287

[1] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646

[2] ELECTRON-CAPTURE BY MULTIPHONON EMISSION AT THE B-CENTER IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22): : 4827 - 4832

[3] PHOTO-IONIZATION TRANSITION CR3+-]CR2+ IN GAAS-CR [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 697 - 699

[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[5] THEORY OF LIGHT ABSORPTION AND NON-RADIATIVE TRANSITIONS IN F-CENTRES [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1950, 204 (1078): : 406 - 423

[6] Jesper T., 1980, Semi-Insulating III-V Materials, P233

[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[8] RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3587 - 3591

[9] LEYRAL P, UNPUB

[10] Makram-Ebeid S., 1980, Journal of the Physical Society of Japan, V49, P287