RECOMBINATION-ENHANCED ANNEALING OF E1 AND E2 DEFECT LEVELS IN 1-MEV-ELECTRON-IRRADIATED N-GAAS

被引：127

作者：

LANG, DV ^{[1
]}

KIMERLING, LC ^{[1
]}

LEUNG, SY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.323161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3587 / 3591

页数：5

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[7]

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[8] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J].

LANG, DV ;

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[9] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

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JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

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