Direct Observation of Capacitor Switching Using Planar Electrodes

被引:81
作者
Balke, Nina [1 ]
Gajek, Martin [2 ]
Tagantsev, Alexander K. [3 ]
Martin, Lane W. [4 ]
Chu, Ying-Hao [5 ]
Ramesh, Ramamoorthy [2 ]
Kalinin, Sergei V. [1 ]
机构
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland
[4] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[5] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
关键词
FERROELECTRIC-FILMS; POLARIZATION; PB(ZR; TI)O-3; IMPRINT; GROWTH; MODEL;
D O I
10.1002/adfm.201000475
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in-plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of the kinetics of domain evolution allows clear visualization of nucleation sites, as well as forward and lateral growth stages of domain formation. It is found that the location of the reverse-domain nucleation is correlated with the direction of switching in a way that the polarization in the domains nucleated at an electrode is always directed away from it. The role of interface charge injection and surface screening charge on switching mechanisms is explored, and the nucleation is shown to be controllable by the bias history of the sample. Finally, the manipulation of domain nucleation through domain structure engineering is illustrated. These studies pave the way for the engineering and design of the ferroelectric device structures through control of individual steps of the switching process.
引用
收藏
页码:3466 / 3475
页数:10
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