RETRACTED: Low-temperature transport in high-mobility polycrystalline pentacene field-effect transistors -: art. no. 125304 (Retracted article. See vol B 66, art. no. 249907, 2002)

被引：12

作者：

Schön, JH ^{[1
]}

Kloc, C ^{[1
]}

Batlogg, B ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.63.125304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The charge transport in high-mobility polycrystalline pentacene field-effect transistors is investigated in the temperature range from 1.7 to 30 K for carrier concentrations ranging from 10(11) to 5 x 10(12) cm(-2). For hole densities below 6 x 10(11) cm(-2) the conductance in the channel is thermally activated and can be described in the framework of an Anderson localization in two dimensions. The charge carriers are localized in the band tails. At low temperatures the transport mechanism crosses over to Mott-type variable-range hopping and finally to Efros-Shklovskii-type hopping due to the presence of a Coulomb gap. Above the critical concentration of 6 x 10(11) cm(-2) the conductance is more or less temperature independent. However, effects of weak localization are observed below 10 K.

引用

页数：5

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