Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells

被引：76

作者：

Mihailetchi, Valentin D. ^{[1
]}

Komatsu, Yuji ^{[1
]}

Geerligs, L. J. ^{[1
]}

机构：

[1] ECN Solar Energy, NL-1755 ZG Petten, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.2870202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a simple method to passivate industrially produced boron-doped emitters for n-type base silicon solar cells using an ultrathin (similar to 1.5 nm) silicon dioxide layer between the silicon emitter and the silicon nitride antireflection coating film. This ultrathin oxide is grown at room temperature by soaking the silicon wafers in a solution of nitric acid prior to the deposition of the silicon nitride antireflection coating film. The n-type solar cells processed in such a way demonstrate a conversion efficiency enhancement of more than 2% absolute over the solar cells passivated without the silicon dioxide layer. (C) American Institute of Physics.

引用

页数：3

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